2sd669, 2sd669a silicon npn epitaxial ade-208-899 (z) 1st. edition sep. 2000 application low frequency power amplifier complementary pair with 2sb649/a outline 1. emitter 2. collector 3. base to-126 mod 1 2 3
2sd669, 2sd669a 2 absolute maximum ratings (ta = 25?) ratings item symbol 2sd669 2sd669a unit collector to base voltage v cbo 180 180 v collector to emitter voltage v ceo 120 160 v emitter to base voltage v ebo 55v collector current i c 1.5 1.5 a collector peak current i c(peak) 33a collector power dissipation p c 11w p c * 1 20 20 w junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c note: 1. value at t c = 25 c.
2sd669, 2sd669a 3 electrical characteristics (ta = 25?) 2sd669 2sd669a item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo 180 180 v i c = 1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo 120 160 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 5 5 vi e = 1 ma, i c = 0 collector cutoff current i cbo 1010 m av cb = 160 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 60 200 v ce = 5 v, i c = 150 ma* 2 h fe2 30 30 v ce = 5 v, i c = 500 ma* 2 collector to emitter saturation voltage v ce(sat) 1 1 v i c = 500 ma, i b = 50 ma* 2 base to emitter voltage v be 1.5 1.5 v v ce = 5 v, i c = 150 ma* 2 gain bandwidth product f t 140 140 mhz v ce = 5 v, i c = 150 ma* 2 collector output capacitance cob 14 14 pf v cb = 10 v, i e = 0, f = 1 mhz notes: 1. the 2sd669 and 2sd669a are grouped by h fe1 as follows. 2. pulse test. bc d 2sd669 60 to 120 100 to 200 160 to 320 2sd669a 60 to 120 100 to 200 maximum collector dissipation curve 30 20 10 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) 3 1.0 0.3 collector current i c (a) 0.01 0.03 0.1 330 10 300 1 100 collector to emitter voltage v ce (v) area of safe operation dc operation(t c = 25 c) (13.3 v, 1.5 a) (40 v, 0.5 a) (120 v, 0.04 a) (160 v, 0.02a) 2sd669a 2sd669
2sd669, 2sd669a 4 3.5 5.5 4.0 4.5 5.0 typical output characteristecs t c = 25 c p c = 20 w i b = 0 0.5 ma 1.0 1.5 2.0 2.5 3.0 1.0 0.8 0.6 0.4 0.2 01020 collector to emitter voltage v ce (v) 50 40 30 collector current i c (a) typical transfer characteristics 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 collector current i c (ma) base to emitter voltage v be (v) v ce = 5 v ta = 75 c 25 ?5 300 250 200 150 100 50 1 130 dc current transfer ratio h fe 300 100 10 3 collector current i c (ma) 1,000 3,000 dc current transfer ratio vs. collector current v ce = 5 v ta = 75 c ?5 25 1.2 1.0 0.8 0.6 0.4 0 0.2 1 3 30 300 10 100 1,000 collector to emitter saturation voltage vs. collector current collector current i c (ma) collector to emitter saturation voltage v ce(sat) (v) 25 ?5 t c = 75 c i c = 10 i b
2sd669, 2sd669a 5 1.2 1.0 0.8 0.6 0.4 0 0.2 1 3 30 300 10 100 1,000 base to emitter saturation voltage vs. collector current collector current i c (ma) base to emitter saturation voltage v be(sat) (v) i c = 10 i b 75 25 t c = ?5 c 240 200 160 120 80 40 0 10 300 gain bandwidth product f t (mhz) 1,000 100 30 collector current i c (ma) gain bandwidth product vs. collector current v ce = 5 v ta = 25 c 200 100 50 20 10 5 2 110 collector output capacitance c ob (pf) 50 20 5 2 collector to base voltage v cb (v) 100 collector output capacitance vs. collector to base voltage f = 1 mhz i e = 0
2sd669, 2sd669a 6 package dimensions 3.1 f +0.15 ?.1 8.0 0.5 2.3 0.3 1.1 3.7 0.7 11.0 0.5 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 2.7 0.4 120 120 120 hitachi code jedec eiaj mass (reference value) to-126 mod 0.67 g unit: mm
2sd669, 2sd669a 7 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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